Gennady Panin

NITA Dongguk Univ. IMT RAS Russian Federation
{{numberWithCommas(31)}} Publications

GaSe layered nanorods formed by liquid phase exfoliation for resistive switching memory applications

Abstract

The increasing interest and rapid progress in the artificial neural networks have driven extensive research in resistive switching memory based on various insulators and two-dimensional nanomaterials. Herein, we have demonstrated a kind of resistive switching memory device based on GaSe layered nanorods fabricated by liquid phase exfoliation (LPE) method with a lateral graphene/GaSe/graphene structure. The single crystalline GaSe layered nanorods mixed with a few nanoflakes were synthesized by shear and ultrasonic (bath and probe) exfoliation methods, which showed high quality and hexagonal crystalline structure. The electrical properties and the resistive switching behavior were investigated, indicating the charge trapping/detrapping effect is the dominant resistive switching mechanism. This work suggests a novel strategy to develop the resistive switching devices based on various 2D materials by using LPE method, and these 2D-nanomaterials-based memristors have the potential to be used for constructing neuromorphic computing systems.

Direct patterning of reduced graphene oxide/graphene oxide memristive heterostructures by electron-beam irradiation

Publication date: Available online 11 September 2019

Source: Journal of Materials Science & Technology

Author(s): Olesya O. Kapitanova, Evgeny V. Emelin, Sergey G. Dorofeev, Gennady N. Panin, Youngmin Lee, Sejoon Lee

Abstract

Memristive heterostructures, composed of reduced graphene oxide with different degree of reduction, were demonstrated through a simple method of ‘direct electron-beam writing’ on graphene oxide. Irradiation with an electron beam at various doses and accelerating voltages made it possible to define high- and low-conductivity graphene-oxide areas. The electron beam-reduced graphene oxide/graphene oxide heterostructure clearly exhibited a nonlinear behavior and a well-controlled resistive switching characteristic at a low operating-voltage range (< 1 V). The proposed memristive heterostructures are promising for highly-efficient digital storage and information process as well as for analogous neuromorphic computations.

Molybdenum Disulfide Nanosheet/Quantum Dot Dynamic Memristive Structure Driven by Photoinduced Phase Transition

The photoinduced 2H‐1T phase transition observed in 2D MoS2 nanosheets (NS) crystals with quantum dots allows the realization of a new dynamic ultrafast photoresistive memory of ultrahigh density. Resistive switching of the MoS2 NS/quantum dot (QD) structure in an electric field can be controlled using local QD excitations, which is attractive for real‐time pattern recognition and photoconfiguration of artificial neural networks. Abstract MoS2 2D nanosheets (NS) with intercalated 0D quantum dots (QDs) represent promising structures for creating low‐dimensional (LD) resistive memory devices. Nonvolatile memristors based 2D materials demonstrate low power consumption and ultrahigh density. Here, the observation of a photoinduced phase transition in the 2D NS/0D QDs MoS2 structure providing dynamic resistive memory is reported. The resistive switching of the MoS2 NS/QD structure is observed in an electric field and can be controlled through local QD excitations. Photoexcitation of the LD structure at different laser power densities leads to a reversible MoS2 2H‐1T phase transition and demonstrates the potential of the LD structure for implementing a new dynamic ultrafast photoresistive memory. The dynamic LD photomemristive structure is attractive for real‐time pattern recognition and photoconfiguration of artificial neural networks in a wide spectral range of sensitivity provided by QDs. Small, EarlyView.

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